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vishay siliconix SIZ720DT document number: 65579 s11-2379-rev. b, 28-nov-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 20-v (d-s) mosfets features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? notebook system power ? pol ? low current dc/dc notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpair is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation proc ess in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 67 c/w for channel-1 and 65 c/w for channel-2. product summary v ds (v) r ds(on) ( ? )i d (a) q g (typ.) channel-1 20 0.0087 at v gs = 10 v 16 a 7.3 nc 0.0115 at v gs = 4.5 v 16 a channel-2 20 0.0062 at v gs = 10 v 16 a 21 nc 0.0080 at v gs = 4.5 v 16 a orderin g information: SIZ720DT-t1-ge3 (lead (p b )-free and halogen-free) g 1 g 2 s 2 s 2 d 1 d 1 1 6 5 4 2 3 3.73 mm 6 mm powerpair ? 6 x 3.7 d 1 s 1 /d 2 pin 1 (pin 7) d 1 s 2 n-channel 2 mosfet n-channel 1 mosfet g 1 s 1 /d 2 g 2 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol channel-1 channel-2 unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 16 a a t c = 70 c 16 a t a = 25 c 16 a, b, c t a = 70 c 16 a, b, c pulsed drain current i dm 70 70 source drain current diode current t c = 25 c i s 16 a 16 a t a = 25 c 3.2 b, c 3.8 b, c single pulse avalanche current l = 0.1 mh i as 18 20 single pulse avalanche energy e as 16 20 mj maximum power dissipation t c = 25 c p d 27 48 w t c = 70 c 17 31 t a = 25 c 3.9 b, c 4.6 b, c t a = 70 c 2.5 b, c 3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, f t ? 10 s r thja 24 32 20 27 c/w maximum junction-to-case (drain) steady state r thjc 3.5 4.6 2 2.6
www.vishay.com 2 document number: 65579 s11-2379-rev. b, 28-nov-11 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 20 v v gs = 0 v, i d = 250 a ch-2 20 v ds temperature coefficient ? v ds /t j i d = 250 a ch-1 21 mv/c i d = 250 a ch-2 20 v gs(th) temperature coefficient ? v gs(th) /t j i d = 250 a ch-1 - 5.2 i d = 250 a ch-2 - 5.5 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1 2 v v ds = v gs , i d = 250 a ch-2 1 2 gate-body leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v ch-1 1 a v ds = 20 v, v gs = 0 v ch-2 1 v ds = 20 v, v gs = 0 v, t j = 55 c ch-1 5 v ds = 20 v, v gs = 0 v, t j = 55 c ch-2 5 on-state drain current b i d(on) v ds ?? 5 v, v gs = 10 v ch-1 20 a v ds ?? 5 v, v gs = 10 v ch-2 20 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 16.8 a ch-1 0.0070 0.0087 ? v gs = 10 v, i d = 20 a ch-2 0.0050 0.0062 v gs = 4.5 v, i d = 14.6 a ch-1 0.0091 0.0115 v gs = 4.5 v, i d = 20 a ch-2 0.0065 0.0080 forward transconductance b g fs v ds = 10 v, i d = 16.8 a ch-1 60 s v ds = 10 v, i d = 20 a ch-2 60 dynamic a input capacitance c iss channel-1 v ds = 10 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 10 v, v gs = 0 v, f = 1 mhz ch-1 825 pf ch-2 2350 output capacitance c oss ch-1 295 ch-2 800 reverse transfer capacitance c rss ch-1 130 ch-2 350 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 16.8 a ch-1 14.8 23 nc v ds = 10 v, v gs = 10 v, i d = 20 a ch-2 44 66 channel-1 v ds = 10 v, v gs = 4.5 v, i d = 16.8 a channel-2 v ds = 10 v, v gs = 4.5 v, i d = 20 a ch-1 7.3 11 ch-2 21 32 gate-source charge q gs ch-1 2.5 ch-2 6.8 gate-drain charge q gd ch-1 2.3 ch-2 5.9 gate resistance r g f = 1 mhz ch-1 0.4 2 4 ? ch-2 0.3 1.5 3
document number: 65579 s11-2379-rev. b, 28-nov-11 www.vishay.com 3 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? channel-2 v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? ch-1 15 25 ns ch-2 25 40 rise time t r ch-1 15 25 ch-2 17 30 turn-off delay time t d(off) ch-1 18 30 ch-2 35 55 fall time t f ch-1 12 20 ch-2 15 25 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 10 v, r g = 1 ? channel-2 v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 10 v, r g = 1 ? ch-1 10 15 ch-2 15 25 rise time t r ch-1 10 20 ch-2 9 15 turn-off delay time t d(off) ch-1 20 30 ch-2 32 50 fall time t f ch-1 10 20 ch-2 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 16 a ch-2 16 pulse diode forward current a i sm ch-1 70 ch-2 70 body diode voltage v sd i s = 10 a, v gs = 0 v ch-1 0.8 1.2 v i s = 10 a, v gs = 0 v ch-2 0.78 1.2 body diode reverse recovery time t rr channel-1 i f = 10 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 10 a, di/dt = 100 a/s, t j = 25 c ch-1 10 20 ns ch-2 22 40 body diode reverse recovery charge q rr ch-1 2.5 5 nc ch-2 11 20 reverse recovery fall time t a ch-1 5.5 ns ch-2 11 reverse recovery rise time t b ch-1 4.5 ch-2 11
www.vishay.com 4 document number: 65579 s11-2379-rev. b, 28-nov-11 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10 v thr u 4 v v gs =3 v v gs =2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.002 0.004 0.006 0.00 8 0.010 0.012 0.014 0 10203040506070 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 04 8 12 16 v ds =20 v i d = 16. 8 a v ds =16 v v ds =5 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 200 400 600 8 00 1000 1200 0 5 10 15 20 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d = 16. 8 a
document number: 65579 s11-2379-rev. b, 28-nov-11 www.vishay.com 5 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 10 1 100 t j = 25 c t j =150 c 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1. 8 1.9 2.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.000 0.005 0.010 0.015 0.020 0246 8 10 i d =16. 8 a t j = 25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 10 20 30 40 50 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s 10 s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
www.vishay.com 6 document number: 65579 s11-2379-rev. b, 28-nov-11 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 10 20 30 40 50 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-case 0 5 10 15 20 25 30 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w )
document number: 65579 s11-2379-rev. b, 28-nov-11 www.vishay.com 7 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 67 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-case 1 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
www.vishay.com 8 document number: 65579 s11-2379-rev. b, 28-nov-11 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10 v thr u 4 v v gs =3 v v gs =2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.0040 0.0045 0.0050 0.0055 0.0060 0.0065 0.0070 0.0075 0.00 8 0 0 10203040506070 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 091 8 27 36 45 v ds =20 v i d =20a v ds =16 v v ds =5 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 600 1200 1 8 00 2400 3000 0 5 10 15 20 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 i d =20a v gs =4.5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
document number: 65579 s11-2379-rev. b, 28-nov-11 www.vishay.com 9 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.000 0.005 0.010 0.015 0.020 0246 8 10 i d =20a t j = 25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 time (s) po w er ( w ) safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s 10 s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
www.vishay.com 10 document number: 65579 s11-2379-rev. b, 28-nov-11 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 20 40 60 8 0 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-case 0 10 20 30 40 50 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w )
document number: 65579 s11-2379-rev. b, 28-nov-11 www.vishay.com 11 vishay siliconix SIZ720DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65579 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-case 1 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
document number: 69028 www.vishay.com 17-nov-08 1 package information vishay siliconix powerpair tm 6 x 3.7 case outline a1 e pin 1 b 1 z z pin 3 pin 2 pin 6 pin 5 pin 4 a k1 b e d1 e2 k2 l k k2 d1 e1 back side v iew d 0.10 c 2x 0.10 c 0.0 8 c pin #1 ident (optional) a 0.10 c 2x c c pin 4 pin 5 pin 6 pin 3 pin 2 pin 1 millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.032 a1 0.00 - 0.05 0.000 - 0.002 b 0.46 0.51 0.56 0.018 0.020 0.022 b1 0.20 0.25 0.38 0.008 0.010 0.015 c 0.18 0.20 0.23 0.007 0.008 0.009 d 3.65 3.73 3.81 0.144 0.147 0.150 d1 2.41 2.53 2.65 0.095 0.100 0.104 e 5.92 6.00 6.08 0.233 0.236 0.239 e1 2.62 2.67 2.72 0.103 0.105 0.107 e2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 bsc 0.05 bsc k 0.45 typ. 0.018 typ. k1 0.66 typ. 0.026 typ. k2 0.60 typ. 0.024 typ. l 0.38 0.43 0.48 0.015 0.017 0.019 ecn: s-82772-rev. b, 17-nov-08 d w g: 5979
document number: 65278 www.vishay.com revision: 04-aug-09 1 pad pattern vishay siliconix recommended pad for powerpair? 6 x 3.7 0.0170 (0.432) recommended pad for po w erpair 6 x 3.7 dimensions in inches (mm) keep-o u t 0.3520 ( 8 .94) x 0.4390 (11.151) 0.3520 ( 8 .941) 0.0220 (0.559) 0, 0.11 0.0190 (0.4 8 3) 0.1040 (2.642) 0, 0.03 0, 0 0.4390 (11.151) 0.1070 (2.71 8 ) 0.0220 (0.559) 0.0170 (0.432) 0.03 8 0 (0.965) 0, - 0.0645 - 0.05, - 0.11 0, - 0.11 0.0500 (1.27) 1
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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